 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS (R) TO-220AB TO-263AB K FEATURES * Trench MOS Schottky technology * Low forward voltage drop, low power losses * High efficiency operation * Low thermal resistance 2 2 V60100C PIN 1 PIN 3 PIN 2 CASE 3 1 VB60100C PIN 1 PIN 2 K HEATSINK * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) * Solder dip 260 C, 40 s (for TO-220AB) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 100 V 320 A 0.66 V 150 C MECHANICAL DATA Case: TO-220AB and TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for commercial grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs Maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (Fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range per diode SYMBOL VRRM IF(AV) IFSM TJ, TSTG V60100C 100 60 30 A 320 - 40 to + 150 C VB60100C UNIT V Document Number: 88942 Revision: 16-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V60100C & VB60100C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 15 A IF = 20 A IF = 30 A IF = 5 A IF = 10 A IF = 15 A IF = 20 A IF = 30 A VR = 80 V Reverse current at rated VRM per diode (2) VR = 100 V Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: 10 ms pulse width TA = 25 C SYMBOL VBR TYP. 100 (minimum) 0.45 0.52 0.58 0.63 0.73 VF TA = 125 C 0.36 0.45 0.53 0.58 0.66 24 13 IR 65 30 MAX. 0.63 0.79 0.58 0.70 500 20 1000 A mA A mA UNIT TA = 25 C Instantaneous forward voltage per diode (1) V TA = 25 C TA = 125 C TA = 25 C TA = 125 C THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC V60100C 2.5 VB60100C 2.5 UNIT C/W ORDERING INFORMATION PACKAGE TO-220AB TO-263AB TO-263AB PREFERRED P/N V60100C-E3/4W VB60100C-E3/4W VB60100C-E3/8W UNIT WEIGHT (g) 1.89 1.38 1.38 PACKAGE CODE 4W 4W 8W BASE QUANTITY 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 70 Resistive or Inductive Load 60 30 D = 0.8 25 D = 0.5 D = 0.3 20 D = 1.0 D = 0.2 15 D = 0.1 T 10 Average Forward Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Average Power Loss (W) 5 D = tp/T tp 0 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Figure 1. Forward Current Derating Curve www.vishay.com 2 Figure 2. Forward Power Loss Characteristics Per Diode Document Number: 88942 Revision: 16-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com New Product V60100C & VB60100C Vishay General Semiconductor 100 10000 TA = 150 C TA = 125 C TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 Junction Capacitance (pF) TA = 100 C 1 TA = 25 C 1000 0.1 0 0.2 0.4 0.6 0.8 1 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 10 10 TA = 150 C TA = 125 C TA = 100 C 1 0.1 Transient Thermal Impedance (C/W) 60 70 80 90 100 Instantaneous Reverse Current (mA) 1 0.01 TA = 25 C 0.001 0.0001 10 20 30 40 50 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88942 Revision: 16-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V60100C & VB60100C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88942 Revision: 16-Jan-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of V60100C
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |